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Band Edge High-κ /Metal Gate n-MOSFETs Using Ultra Thin Capping Layers

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9 Author(s)
V. K. Paruchuri ; IBM Semiconductor Research and Development Center (SRDC), Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598, USA, E-mail: paruchur@us.ibm.com ; V. Narayanan ; B. P. Linder ; S. L. Brown
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Ultra thin layers of magnesium containing cap layers are deposited on Hf based dielectrics prior to deposition of the TiN/Poly-Si electrode stack [1] to achieve band-edge (BE) high-kappa/metal nMOSFETs with good mobility (190 cm2/Vs @ 1 MV/cm) at Tinv (1.45 nm), in a gate first process flow. It is shown that Vt can be modulated anywhere between midgap and band edge by changing the cap layer thickness. Short channel devices with band edge characteristics are demonstrated down to 40 nm.

Published in:

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Date of Conference:

23-25 April 2007