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SiGe/Si HBT combining the integration and cost benefits of silicon has came of age as an ideal process for wireless/wired communication applications. To encompass both high-speed analog and wireless circuit applications, production-proven Spice model of HBT that allows the great amount of flexibility and provides excellent model accuracy over a broad range of applications is highly desirable. This paper reports on an unitary set of geometry-scalable, wide-band models for the HBTs of 0.18 um BiCMOS technology. Verification of the scalable model is achieved with focus on the correlations of DC, Y-parameter and fT, noise, large-signal and Monte-Carlo of mismatch and statistical covers a wide range of product requirement.