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Novel SONOS-Type Nonvolatile Memory Device with Suitable Band Offset in HfAlO Charge-Trapping Layer

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7 Author(s)

Satisfactory operation and reliability characteristics of SONOS-type flash devices are achieved by an optimal Hf/Al content in HfAlO charge-trapping layer. Results indicate that operation performance can be improved by a suitable band offset of HfAlO charge-trapping layer. High-speed operation can be realized by adopting CHEI programming and F-N erasing for NOR flash applications.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007

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