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High-κ HfO2/TiO2/HfO2 multilayer quantum well flash memory devices

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12 Author(s)
Maikap, S. ; Ind. Technol. Res. Inst., Hsinchu ; Tzeng, P.J. ; Tseng, S.S. ; Wang, T.Y.
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High-kappa HfO2/TiO2/HfO2 multilayer quantum well (MQW) charge storage devices with a large memory window of DeltaVtap8.1 V, an excellent endurance and a good retention (~9% charge loss at 20degC) are reported. Both program and erase speeds of DeltaVt>3 V@100 mus are achieved for memory transistors under channel hot carrier injections. Furthermore, quantum well memory capacitors with high-kappa Al2O3 as a blocking oxide and high work function metal gate show low leakage current density of ~2.4times10-7 A/cm2@Vg=-5 V at 125degC and high program/erase speed of DeltaVFB>2 V@10 mus with a low operation voltage of Vg<5 V.

Published in:

VLSI Technology, Systems and Applications, 2007. VLSI-TSA 2007. International Symposium on

Date of Conference:

23-25 April 2007