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This letter presents a new Damascene-gate FinFET process that inherently suppresses stringers, resulting from gate and spacers patterning. The so-called spacer-first integration scheme relies on the engineering of a hydrogen silsesquioxane layer by electron beam lithography followed by two selective compartmentalized development steps to successively release the Damascene-gate cavity and the source/drain (S/D) contact regions. In contrast to the existing gate-first and gate-last integration approaches, the resulting FinFET process does not impose any restriction or interdependency on the sizing of the fins, gate, spacers, and S/D regions. A complete morphological and electrical validation is proposed in the particular case of wrap-around self-aligned metallic Schottky S/D contacts.