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Experimental Study on Breakdown of Mobility Universality in \langle 100\rangle -Directed (110)-Oriented pMOSFETs

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5 Author(s)
Ken Shimizu ; Inst. of Ind. Sci. & the Collaborative Inst. of Nano Quantum Inf. Electron., Univ. of Tokyo, Meguro ; Gen Tsutsui ; Doni Januar ; Takuya Saraya
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This paper describes experimental determination of the value of eta in (110)-oriented SOI pMOSFETs by changing the SOI thickness and temperature. It is found for the first time that in the case of a lang100rang-directed channel, eta should be larger than unity, which implies the collapse of the mobility universality, when temperature is low or SOI thickness is ultimately thin. Possible mechanisms of the breakdown of the mobility universality are discussed

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IEEE Transactions on Nanotechnology  (Volume:6 ,  Issue: 3 )