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This paper reports the development and evaluation of an InSb photovoltaic infrared sensor (InSb PVS) operating at room temperature. The InSb PVS consists of 700 InSb p+-p--n+ photodiodes connected in series, on a semi-insulating GaAs (100) substrate. An Al0.17In0.83Sb barrier layer between p+ and p- layers was used to reduce diffusion of photo-excited electrons. Cutoff wavelength was 6.8 mum and output signal was linear with incident irradiance. Noise equivalent temperature difference (NETD) of 2.2times10-3 degC/Hz1/2 was obtained at room temperature, which shows the sensor to be a promising device for human body detection or non-contact thermometry.