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A Ultra-Wideband Amplitude Modulation (AM) Detector Using Schottky Barrier Diodes Fabricated in Foundry CMOS Technology

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2 Author(s)
Swaminathan Sankaran ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL ; Kenneth K. O

Utility of Schottky diodes fabricated in foundry digital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector consisting of a low-noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The input and output matching of the detector is better than -10 dB from 0-10.3 GHz and 0-1.7 GHz, respectively, and almost covers the entire UWB frequency band (3.1-10.6 GHz). The measured peak conversion gain is -2.2dB. The sensitivity over the band for amplitude modulation with the minimum E b/No of 6 dB is between -53 and -56 dBm. The power consumption is only 8.5 mW

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 5 )