High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO₂ and HfSiON

A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO₂ and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized atomic layer deposited (ALD) HfO₂ on Si(110) substrates with a ~ 3.3times high field hole mobility (μ_h) enhancement vs. a Si(100) substrate. On-state drain current (I_on) obtained for the HfO₂/Si(110) is ~831 μA/μm at 100 nA/μm offstate drain current (I_off). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO₂ and HfSiON on Si(110). HfO₂ exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO ₂ has reduced coulomb and surface roughness scattering vs. HfSiON