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High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO2 and HfSiON

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13 Author(s)

A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO2 and HfSiON, and compatibility with strain engineering. We demonstrate p-channel MOSFETs (pFETs) with optimized atomic layer deposited (ALD) HfO2 on Si(110) substrates with a ~ 3.3times high field hole mobility (μh) enhancement vs. a Si(100) substrate. On-state drain current (Ion) obtained for the HfO2/Si(110) is ~831 μA/μm at 100 nA/μm offstate drain current (Ioff). This is among the best performing pFETs ever reported. We also report, for the first time, a difference in performance between HfO2 and HfSiON on Si(110). HfO2 exhibits better hole mobility and overall performance than HfSiON on Si(110). Low temperature hole mobility measurements suggest that HfO 2 has reduced coulomb and surface roughness scattering vs. HfSiON

Published in:

Electron Devices Meeting, 2006. IEDM '06. International

Date of Conference:

11-13 Dec. 2006