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Design of X-Band MEMS Microstrip Shunt Switches

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4 Author(s)
Rizk, Jad B. ; Student Member IEEE, Radiation Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109-2122, USA. jrizk@engin.umich.edu ; Muldavin, Jeremy B. ; Tan, Guan-Leng ; Rebeiz, G.M.

This paper presents the design and performance of X-band MEMS switches built in microstrip technology. The switches result in an insertion loss of less than 0.1 dB and a small isolation bandwidth, less than 10%, and are limited by the radial stubs band-widths. The isolation value is also not dependent on the down-state capacitance of the switch. The isolation bandwidth (less than ¿20 dB isolation) is improved to 8-13 GHz with the use of a ¿-network and two MEMS switches. The up-state insertion loss of the ¿ switch is less than 0.25 dB. The paper demonstrates that the performance of microstrip switch circuits without via-holes is dominated by the shorting (radial) stubs, and careful design must be done to result in an acceptable bandwidth of operation.

Published in:

Microwave Conference, 2000. 30th European

Date of Conference:

Oct. 2000