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Photoluminescence and electrical characterization of transparent Eu and Pd-doped TiO2 thin films

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3 Author(s)
J. Domaradzki ; Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland. e-mail: ; A. Borkowska ; D. Kaczmarek

In this work, optical and electrical characterization of transparent Eu and Pd-doped TiO2 thin films have been presented. Thin films were deposited by low pressure hot target reactive magnetron sputtering form metallic Ti-Pd-Eu mosaic target on silicon. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix could modify its properties to obtain electrically and optically active oxide-semiconductor with the electron-type (n) of electrical conduction at room temperature. Pd dopant changes the electrical properties of TiO2 from dielectric oxide to conducting oxide. Eu dopant results in enhanced optical activity of Pd-doped TiO2 thin films in ultraviolet range

Published in:

2006 International Conference on Advanced Semiconductor Devices and Microsystems

Date of Conference:

Oct. 2006