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Diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy

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8 Author(s)
R. Srnanek ; Microelectronics Department, Slovak University of Technology, Ilkovi¿ova 3, 812 19 Bratislava, Slovakia. e-mail: ; G. Irmer ; R. Zalusky ; F. Dubecky
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We present diagnostics of LT GaAs/InP structures by micro-Raman spectroscopy, microphotoluminescence and SIMS methods. Bevelled form of the samples was used for the study. The thickness of the epitaxial LT GaAs layer with presence of high density of antisites AsGaAsand As excess was determined. Between InP substrate and LT GaAs layer an inter facial layer composed from InAs, InO and C was detected and studied

Published in:

2006 International Conference on Advanced Semiconductor Devices and Microsystems

Date of Conference:

16-18 Oct. 2006