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Energy Band Diagram of the Ru/Hf0.75Si0.25Oy/Si Gate Stack

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5 Author(s)
Frohlich, K. ; Inst. of Electr. Eng., Centre of Excellence CENG, Bratislava ; Espinos, J.P. ; Tapajna, M. ; Husekova, K.
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The authors have studied advanced MOS structure containing Ru gate electrode, Hf0.75Si0.25Oy dielectric and Si substrate by means of capacitance-voltage characteristics (C-V), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Using experimental values we have constructed energy band diagram of the Ru/Hf0.75Si0.25/Si gate stack

Published in:
Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference: Oct. 2006

Page(s):
29 - 32
Print ISBN:
1-4244-0369-0
INSPEC Accession Number:
9320376
Conference Location :
Smolenice Castle
Digital Object Identifier :
10.1109/ASDAM.2006.331146
Product Type:
Conference Publications

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