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Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

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5 Author(s)

The authors have studied the leakage characteristics of Ru/HfxSi 1-xOy/Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 degC in O2. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 degC improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the oxide with Ru electrode

Published in:

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference:

Oct. 2006