Leakage characteristics of advanced MOS capacitors with hafnium silicate dielectric and Ru electrode

We have studied the leakage characteristics of Ru/Hf
_x
Si
_1-x
O
_y
/Si MOS capacitors projected for advanced CMOS gate technology. Prior to Ru gate electrode deposition, the gate dielectrics were annealed by RTA in the temperature range of 700 - 1000 °C in O
₂
. The influence of RTA has been analyzed by X-ray diffraction, X-ray reflectivity and capacitance-voltage techniques. RTA at temperatures ranging from 800 - 900 °C improves the leakage characteristics. Presumably, the Pool-Frenkel mechanism controls the current flow through the Hf
_x
Si
_1-x
O
_y
gate oxide with Ru electrode.