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1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability

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7 Author(s)
Onozawa, Y. ; Fuji Electr. Device Technol. Co., Ltd, Matsumoto ; Otsuki, M. ; Iwamuro, N. ; Miyashita, S.
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This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dIC/dt of the IGBT. The new IGBTs with high turn-on dIC /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level

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Industry Applications, IEEE Transactions on  (Volume:43 ,  Issue: 2 )