Temperature impact on the lorentzian noise induced by electron valance band tunneling in partiallydepleted SOI nMOSFETs

In this paper, the temperature impact on the Lorentzian noise induced by electron valence band tunneling (EVB) is analyzed for partially depleted SOI MOSFETs. In (Lukyanchikova et al., 2003) and (Lukyanchikova et al., 2004) the Lorentzian noise parameters were already studied at 300K and a model based on shot noise of the EVB tunneling current was proposed. The aim of this paper is to investigate the Lorentzian time constant tau and the plateau amplitude of the gate voltage noise spectral density S
_VG
(0) variation versus temperature, where S
_VG
(0) = S
_I
(0)/(gm)
²
. It is observed that from 300K down to 80K tau and S
_VG
(0) exhibit behaviors in agreement with the existing model (Lukyanchikova et al., 2003) and (Lukyanchikova et al., 2004)