Referenced Items are not available for this document.
Sub-10nm CMOS devices are the critical issue, because CMOS scaling is going to be sub-25nm regime. Scaling issues of nano-size MOSFETs can be discussed on the basis of sub-10 nm MOSFETs characteristics, which have been developed and confirmed switching characteristics and low-temperature characteristics. Studying device limitation issues and developing new breakthrough technologies are required to challenge sub-10-nm CMOS devices
Published in:
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Date of Conference: 23-26 Oct. 2006
- Page(s):
- 23 - 26
- E-ISBN :
- 1-4244-0161-5
- Print ISBN:
- 1-4244-0160-7
- INSPEC Accession Number:
- 9408380
- Conference Location :
- Shanghai
- Digital Object Identifier :
- 10.1109/ICSICT.2006.306046
- Product Type:
- Conference Publications
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