A Circuit Simulation Model of a Novel Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications

In this paper, we present a novel integrable 80 V silicon lateral trench power MOSFET together with its circuit simulation model. The lateral trench power MOSFET exhibits a low figure of merit (R
_on
times Q
_g
) proving very attractive for high frequency switching applications. The lateral trench power MOSFET was initially simulated using the 2-D device simulator MEDICI, and an analytical model was developed and implemented in MAST HDL for use in circuit simulators such as SABER. Circuit simulations were performed using the model developed and high frequency switching performance of the proposed device is compared against a commercial device