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Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

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5 Author(s)
J. m. Ortiz-Rodriguez ; Div. of Semicond. Electron., Nat. Inst. of Stand. & Technol., Gaithersburg, MD ; A. R. Hefner ; D. Berning ; C. Hood
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A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows achieving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system

Published in:

2006 IEEE Workshops on Computers in Power Electronics

Date of Conference:

16-19 July 2006