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InGaAs/GaAs Quantum-Dot Superluminescent Diode for Optical Sensor and Imaging

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7 Author(s)
Djie, H.S. ; Electr. & Comput. Eng, Lehigh Univ., Bethlehem, PA ; Dimas, C.E. ; Dong-Ning Wang ; Boon-Siew Ooi
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We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured

Published in:

Sensors Journal, IEEE  (Volume:7 ,  Issue: 2 )

Date of Publication:

Feb. 2007

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