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Memory Effects in Si/SiO2/Nano-Crystalline PbS Heterostructures

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4 Author(s)
M. Buda ; National Institute of Material Physics, Str. Atomistilor 105 bis, Bucharest-Magurele, P.O. Box MG7, 77125, Romania. E-mail: ; V. Stancu ; E. Pentia ; T. Botila

The mechanism of charge storage in p Si/SiO2/nano-crystalline PbS heterostructures is investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at different frequencies. The nanocrystalline thin PbS films were obtained using the chemical bath deposition method with a shorter reaction time and without doping element in the reducing bath. The C-V curves show hysteresis indicating charge storage with a maximum charge density of 3 times 1011 cm-2 for the highest measurement frequency of 100 kHz. The charge storage capacity is enhanced in the case of using a nanocrystalline PbS thin film instead of a standard macro-crystalline film

Published in:

2006 International Semiconductor Conference  (Volume:2 )

Date of Conference:

27-29 Sept. 2006