Cart (Loading....) | Create Account
Close category search window

Numerical Simulation of RF Noise in Si Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jungemann, C. ; Inst. for Electron., Bundeswehr Univ., Neubiberg ; Meinerzhagen, B.

The workhorse of today's TCAD is the drift-diffusion (DD) model, which in the special formulation of the impedance field method has been used for a long time for noise calculation, but there has been much debate over its noise source. The derivation of the DD noise model from the Langevin-type Boltzmann equation (LBE) is discussed in detail and it is shown that the DD noise source should be local in the real space, white and given by the power spectral density (PSD) of the velocity fluctuations at zero frequency calculated under homogeneous bulk conditions in analogy to the mobility. The white noise source and frequency independent mobility of the DD model reflect the neglect of certain acceleration terms in the LBE. By comparison of solutions of the LBE with and without these terms it is found that the DD model works well up to frequencies of about 100 GHz in silicon devices. Comparison of solutions of the LBE and DD model for different definitions of the noise source shows that the best device results are obtained with the PSD of the velocity fluctuations calculated under bulk conditions. Use of the Einstein relation to calculate the noise source for nonequilibrium, as is often done, leads to an underestimation of noise. While the DD model delivers good results in sub-micron devices, it fails in very small devices resulting in spurious super shot noise. Based on the LBE it is found that excess noise in devices is mostly due to scattering of cold or warm electrons, whereas hot electrons contribute little in the absence of electron-hole pair generation

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.