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3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

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2 Author(s)
Andrea Ghetti ; STMicroelectronics - FTM - Advanced R&D, Via Olivetti 2, 20041 Agrate Brianza, Italy. Email: andrea.ghetti@st.com ; Denis Rideau

In this paper we report on 3D Monte Carlo device simulation of silicon nanowire MOSFETs including quantum mechanical and strain effects. The newly developed simulator solves self-consistently in 1D, 2D or 3D the Schrodinger Eq. for the quantum mechanical correction of the potential, while mechanical strain effects are accounted for by an appropriate change of the band structure. The simulation program has been then applied to the simulation of silicon nanowire MOSFETs achieving a good agreement with experimental data, demonstrating the feasibility of 3D semi-classical Monte Carlo simulation with quantum mechanical correction for very advanced devices

Published in:

2006 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

6-8 Sept. 2006