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Modeling of Electron Mobility Degradation for HfSiON MISFETs

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8 Author(s)
Hiroyoshi Tanimoto ; Center for Semiconductor Reserach & Development, Toshiba Corp. Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235¿8522, Japan. TEL: +81¿45¿770¿3645, FAX: +81¿45¿770¿3571, E-Mail: ; Masaki Kondo ; Toshiyuki Enda ; Nobutoshi Aoki
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The electron mobility degradation for HfSiON MISFETs was investigated. We found that the degradation had two origins; one is Coulomb scattering caused by fixed charges in HfSiON films and the other is phonon scattering by interfacial thin oxynitrided (SiON) layer; and HfSiO-related remote phonon scattering is not dominant. The mobility degradation caused by the Coulomb scattering and SiON phonon scattering is separated into two components and we develop an empirical mobility model for HfSiON devices that enables accurate simulation of electrical characteristics of the HfSiON devices

Published in:

2006 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

6-8 Sept. 2006