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Analytical Modeling of Electron Mobility in Strained Germanium

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5 Author(s)
S. Dhar ; Institute for Microelectronics, TU Wien, Gußhausstraße 27¿29/E360, 1040 Wien, Austria. Phone: +43-1-58801/36018, Fax: +43-1-58801/36099, E-mail: ; E. Ungersboeck ; H. Kosina ; T. Grasser
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An analytical model for the low-field bulk electron mobility tensor in strained germanium is presented. The model includes the effects of strain-induced splitting of the conduction band valleys in germanium and the corresponding inter-valley scattering reduction as well as temperature and doping dependence. Bulk mobility values larger than 2.5 times the strained silicon values has been predicted. The results obtained from the model have been verified using Monte Carlo simulations

Published in:

2006 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

6-8 Sept. 2006