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Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors

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3 Author(s)
Seonghoon Jin ; Electrical and Computer Engineering Department, University of Massachusetts, Amherst, MA01003 USA. e-mail: ; Young June Park ; Hong Shick Min

Based on the nonequilibrium Green's function formalism, we study the influence of electron-phonon interactions on the electronic transport in silicon nanowire transistors as we change the channel length from 7 to 45 nm. Intravalley and intervalley phonon scattering mechanisms are taken into account in the simulation. The validity of the pure quantum ballistic transport model and the semi-classical drift-diffusion model for different channel lengths is also discussed

Published in:

2006 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

6-8 Sept. 2006