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Active and Passive RF Device Compact Modeling in CMOS Technoloies

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4 Author(s)
Hyungcheol Shin ; School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, South Korea. E-mail: ; In Man Kang ; Jong Wook Jeon ; Joonho Gil

A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented

Published in:

2006 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

6-8 Sept. 2006