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Active and Passive RF Device Compact Modeling in CMOS Technoloies

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4 Author(s)
Hyungcheol Shin ; Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ. ; In Man Kang ; Jong Wook Jeon ; Gil, J.

A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented. Finally, an RF model of an accumulation-mode MOS varactor is presented

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006