By Topic

Failure Mechanisms of Direct Copper Bonding Substrates (DCB)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Michael Gunther ; Robert Bosch GmbH, Stuttgart, Germany; Electronic Packaging Laboratory, Dresden University of Technology, Germany. ; Klaus-jurgen Wolter ; Martin Rittner ; Wolfgang Nuchter

The instant of macroscopic crack starting and the location of first cracked area are described for direct copper bonding substrates. The first crack appearance is followed by subcritical crack growth in the ceramics. The direction of crack growth changes from mode II to mode I, because of residual stress in the assembly. Crack appears at symmetrical layouts preferential to one side depending on the manufacturing history of the DCB substrate. This effect can have two reasons. First, the loading caused by copper varies on both sides because of the serial bonding process. Second, the strength of the ceramic on both sides is different because of the growth of different interfaces between the copper and the alumina. By characterizing alumina, the same strength on both sides by a four point bending test can be found. Indention fracture experiments do not show a significant different behaviour in different breaking directions. Furthermore, the location of crack occurrence can be changed by the layout of the conductive pad and the aging of the assembly

Published in:

2006 1st Electronic Systemintegration Technology Conference  (Volume:2 )

Date of Conference:

5-7 Sept. 2006