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High-temperature CW operation of InGaAsP-InP semi-insulating buried heterostructure lasers using reactive ion-etching technique

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5 Author(s)
Higashi, T. ; Opt. Semicond. Devices Lab., Fujitsu Labs. Ltd., Kanagawa, Japan ; Takeuchi, T. ; Morito, K. ; Matsuda, M.
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We fabricated 1.5-μm semi-insulating buried heterostructure (SI-BH) lasers with InGaAsP-InP strained-layer multiple-quantum wells using a reactive ion etching (RIE) technique for mesa definition. A very high CW operating temperature of 150/spl deg/C was obtained in a 300-μm-long laser whose rear facet was HR-coated.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 8 )