Referenced Items are not available for this document.
Several novel schemes of implementing MTCMOS circuits in hybrid UTSOI-epitaxial CMOS structures are proposed and analyzed through comprehensive circuit simulations. The schemes offer intrinsic high circuit density and facilitate header/footer body biasing techniques for performance enhancement and leakage reduction. The effectiveness in improving active-mode performance, and reducing virtual supply bounce and standby leakage power is demonstrated
Published in:
VLSI Design, Automation and Test, 2006 International Symposium on
Date of Conference: 26-28 April 2006
- Page(s):
- 1 - 2
- E-ISBN :
- 1-4244-0180-1
- Print ISBN:
- 1-4244-0179-8
- INSPEC Accession Number:
- 9122757
- Conference Location :
- Hsinchu
- Digital Object Identifier :
- 10.1109/VDAT.2006.258120
- Product Type:
- Conference Publications
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