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Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method

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3 Author(s)
Fukuda, T. ; Dept. of Syst. LSI Design, TOSHIBA Corp., Kawasaki ; Hayakawa, S. ; Shigyo, N.

Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology

Published in:

VLSI Design, Automation and Test, 2006 International Symposium on

Date of Conference:

26-28 April 2006