By Topic

Superior-Order Curvature-Corrected Voltage References Using Double Differential Structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Popa, C. ; Fac. of Electron., Telecommun. & Inf. Technol., Bucharest

Two original superior-order curvature-corrected voltage references was presented. In order to improve the temperature behavior of the circuits, double differential structures was used, implementing the linear and the superior-order curvature corrections. An original CTAT (complementary to absolute temperature) voltage generator was proposed, using exclusively MOS transistors biased in weak inversion for a low power operation of the voltage reference. The superior-order curvature-correction was implemented by taking the difference between two gate-source voltages of subthreshold-operated MOS transistors, biased at drain currents having different temperature dependencies: PTAT (proportional to absolute temperature) and PTAT2. The SPICE simulations confirm the theoretical estimated results, showing temperature coefficients under 11 ppm/K for an extended input range 173K < T < 423K and for a supply voltage of 2.5V and a current consumption of about 1muA

Published in:

Automation, Quality and Testing, Robotics, 2006 IEEE International Conference on  (Volume:2 )

Date of Conference:

25-28 May 2006