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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:42 Issue:3 Help

Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions

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9 Author(s)
Kurokawa, M. ; Dept. of Phys., Rikkyo Univ., Tokyo, Japan ; Motobayashi, T. ; Ieki, K. ; Shimoura, S.
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Ion-implanted silicon detectors were irradiated with 18-150 MeV 16O, 20 MeV 40Ar, and 53 MeV 110Xe. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2×108 cm-2. Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies

Published in:
Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 3 )

Date of Publication: Jun 1995

Page(s):
163 - 166
ISSN :
0018-9499
INSPEC Accession Number:
4964020
Digital Object Identifier :
10.1109/23.387356
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jun 1995
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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