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ZnO films on {001}-cut <110>-propagating GaAs substrates for surface acoustic wave device applications

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5 Author(s)
Yoonkee Kim ; US Army Res. Lab., Fort Monmouth, NJ, USA ; Hunt, W.D. ; Hickernell, F.S. ; Higgins, R.J.
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A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110>-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 /spl mu/m and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K/sup 2/ and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO/sub 2/ or Si/sub 3/N/sub 4/ on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.<>

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Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:42 ,  Issue: 3 )