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Self-adjusting threshold-voltage scheme (SATS) for low-voltage high-speed operation

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2 Author(s)
Kobayashi, T. ; Microelectron Center, Toshiba America Electron. Components Inc., USA ; Sakurai, T.

A circuit technique to reduce threshold voltage fluctuation by a use of self-substrate-bias is introduced. The substrate bias is controlled so that leakage current of a representative MOSFET is adjusted constant with a feedback loop. The threshold voltage can be controlled within ±0.05 V and the speed gains under 1.5 V and 1V VDD are estimated to be a factor of 1.3 and 3, respectively. A test chip is fabricated and effectiveness of the scheme is investigated

Published in:

Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994

Date of Conference:

1-4 May 1994