By Topic

Thermocompression bonding effects on bump-pad adhesion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kim, Y.-G.G. ; Dept. of Mech. Eng., Texas Univ., Austin, TX, USA ; Kumar Pavuluri, J. ; White, J.R. ; Busch-Vishniac, I.J.
more authors

In the wafer bumping process, metal bumps are deposited on aluminum pads and are later used to bond the silicon die to the I/O connections. The bump strength is important for the mechanical integrity and overall reliability of the interconnect. In this paper the effects of the following thermocompression bonding parameters on the bump-pad adhesion of TAB (tape automated bonding) bonds are experimentally determined and analytically explained: thermode temperature, base temperature, bonding pressure, and bonding duration. Experiments were performed on a 328-lead TAB device (gold bump on 4-mil pitch) and were based upon a 4-parameter, 3-level, Taguchi orthogonal array. The experimental results are compared with results obtained from finite element analyses. A consistent increase in the bump strength was observed after thermocompression bonding. Applied thermode pressure and bonding duration were found to be the most significant parameters that affect bump-pad adhesion

Published in:

Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on  (Volume:18 ,  Issue: 1 )