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Simulation of high frequency PWM and quasi-resonant converters using the lumped-charge power MOSFET model

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3 Author(s)
Budihardjo, I. ; Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA ; Lauritzen, P.O. ; Chihao Xu

A new, physically-based power MOSFET model features continuous and accurate curves for all three interelectrode capacitances. The model equations are derived from the charge stored on two discrete internal nodes and the three external terminals. A direct parameter extraction technique is demonstrated for the capacitance parameters. Applications include constant current gate drive circuit (gate charge plot); snubber design for a flyback converter; and a high frequency quasi-resonant zero-voltage switch converter. The availability of such accurate power device models can be expected to change power converter design methodology

Published in:

Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual

Date of Conference:

13-17 Feb 1994