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Two-dimensional transmission line matrix (TLM) simulation of the electromagnetic fields in a rectangular section of a discretized GaAs MESFET channel with arbitrary doping profile

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2 Author(s)
Dindo, S. ; Dept. of Electr. Eng., Ottawa Univ., Ont., Canada ; Ney, M.

A two-dimensional lossy shunt TLM network is adapted to simulate the Maxwell field equations of a GaAs MESFET. By discretizing the channel into rectangular sections of single thickness, the proposed TLM technique is shown to be able to simulate the calculated electromagnetic fields of an arbitrarily doped channel section. Theoretical and experimental results are compared for uniform and nonuniform channel conductivity.<>

Published in:
Microwave Symposium Digest, 1993., IEEE MTT-S International

Date of Conference: 14-18 June 1993

Page(s):
1455 - 1458 vol.3
Meeting Date :
14 Jun 1993-18 Jun 1993
ISSN :
0149-645X
Print ISBN:
0-7803-1209-0
INSPEC Accession Number:
4534284
Conference Location :
Atlanta, GA, USA
Digital Object Identifier :
10.1109/MWSYM.1993.276723
Product Type:
Conference Publications

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