Two-dimensional transmission line matrix (TLM) simulation of the electromagnetic fields in a rectangular section of a discretized GaAs MESFET channel with arbitrary doping profile

A two-dimensional lossy shunt TLM network is adapted to simulate the Maxwell field equations of a GaAs MESFET. By discretizing the channel into rectangular sections of single thickness, the proposed TLM technique is shown to be able to simulate the calculated electromagnetic fields of an arbitrarily doped channel section. Theoretical and experimental results are compared for uniform and nonuniform channel conductivity.<
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