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Characterization of the mechanisms producing bending moments in polysilicon micro-cantilever beams by interferometric deflection measurements

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4 Author(s)
Lober, T.A. ; Microsyst. Technol. Lab., MIT, Cambridge, MA, USA ; Huang, J. ; Schmidt, M.A. ; Senturia, S.D.

Polysilicon micro-cantilever beams and doubly-supported beams are fabricated and conditioned with phosphorus doping and high-temperature anneal cycles to assess the effects of process history and geometry on polysilicon microstructure rigidity. Using a Linnik interferometer, deflection trends for series of beams are measured and compared for several process conditions. Two bending moments can induce beam deflection: the first due to the beam boundary support, and the second due to stress nonuniformity through the beam thickness. A comparison of polysilicon microstructure deflection behavior for doping and annealing conditions is presented and discussed.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1988. Technical Digest., IEEE

Date of Conference:

6-9 June 1988