The quantum-confined Stark effect of tensile-strained GaAs-InAlAs quantum wells grown on top of a related nonpseudomorphic InAlAs grid layer on GaAs substrates was studied. It was demonstrated by waveguide absorption measurements that polarization-independent optical modulation in tensile-strained GaAs wells is possible in a wavelength range of around 870 nm.<
Published in:
Photonics Technology Letters, IEEE
(Volume:5
,
Issue:
12
)
Date of Publication: Dec. 1993