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White noise in MOS transistors and resistors

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3 Author(s)
R. Sarpeshkar ; California Inst. of Technol., Pasadena, CA, USA ; T. Delbruck ; C. A. Mead

The theoretical and experimental results for white noise in the low-power subthreshold region of operation of an MOS transistor are discussed. It is shown that the measurements are consistent with the theoretical predictions. Measurements of noise in photoreceptors-circuits containing a photodiode and an MOS transistor-that are consistent with theory are reported. The photoreceptor noise measurements illustrate the intimate connection of the equipartition theorem of statistical mechanics with noise calculations.<>

Published in:

IEEE Circuits and Devices Magazine  (Volume:9 ,  Issue: 6 )