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Optimized metalization processing for improved manufacturability

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4 Author(s)
Chowdhury, V. ; VLSI Technol. Inc., San Jose, CA, USA ; Harper, G. ; Song, S.L.S. ; Brugge, H.B.

Improvements brought about in 1.0-μm and 1.5-μm production CMOS processes through modifications in the metalization process are discussed. The standard metalization process consists of dry via etching with a bottom Ti-W thickness of 2200 Å deposited in the same pump-down as the Al film (no air exposure of bottom Ti-W). In the modified process, via etching is wet/dry and the bottom Ti-W thickness is reduced to 1700 Å and exposed to air before deposition of Al-1% Cu film. These modifications have brought about significant improvements in the reliability and yield of the process. Improvements were observed consistently at two different fabrication sites

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

Date of Conference:

30 Sep-1 Oct 1992