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Optimization of LPCVD silicon nitride process in a vertical thermal reactor: use of design of experiments

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8 Author(s)
Shenasa, Mohsen ; Nat. Semicond. Corp., Santa Clara, CA, USA ; Moinpour, M. ; O'Toole, B. ; Stueve, B.
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Process and equipment characterization of a low pressure chemical vapor deposition (LPCVD) nitride vertical thermal reactor is discussed. Film thickness uniformity for the LPCVD silicon nitride film was improved from 6.7% to 4.5%. This was achieved by implementing a systematic methodology involving as the use of gauge capability study, passive data collection and design of experiments. In addition, particle data were collected, and major sources of particle generation were identified. Both process and hardware modifications were implemented, resulting in reduced defect density

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

Date of Conference:

30 Sep-1 Oct 1992