Determination of MOSFET's channel doping profile right up to SiO/sub 2//Si interface

The threshold-voltage fitting method is proposed to determine the channel doping profile of both n-channel and counter-implantation p-channel MOSFET's. The doping profile in the region near SiO/sub 2//Si interface, of depth less than the extrinsic Debye length, can be determined. The accuracy of the developed method has been tested through both the numerical simulation results and the experimental data. Quite good agreement has been obtained.<
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