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Effects of the field-edge transistor on SOI MOSFETs

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5 Author(s)
Jian Chen ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Ko, P.K. ; Chenming Hu ; Solomon, R.
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Width dependence of SIMOX SOI MOSFETs characteristics are studied. Drain current kinks and subthreshold current humps are found to be dependent on channel width and they are related to the physical shape of the SOI film. It is found that they are the results of thinning of SOI film edge due to LOCOS isolation. The shorter channel width devices are fully depleted while the longer channel width device are not fully depleted. A model is proposed to explain the effects of field-edge transistor in SOI MOSFETs

Published in:

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Date of Conference:

22-24 May 1991

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