The relationship between the breakdown strength and the material structure of the order of a few micrometers near the interface between the polyethylene insulation and the semiconducting material is discussed. It was found that the agglomeration of the carbon particles in the semiconducting material ranges from about 100-300 nm. The autocorrelation function A(D) of the transmission electron microscope (TEM) photographs can represent some aspects of the agglomeration of the carbon particles. The characteristic distance D 0 in the autocorrelation function ranges from about 100-300 nm, and corresponds closely to the size of the agglomeration of the carbon particles. It was found that the highest breakdown strength in terms of the Weibull 10% breakdown strength may be obtained when D0 is around 200 nm. The thermal breakdown may explain the relationship between the breakdown strength and the agglomeration of the carbon particles
Published in:
Electrical Insulation, IEEE Transactions on
(Volume:23
,
Issue:
3
)
Date of Publication:
Jun 1988
- Page(s):
-
335
-
344
- ISSN :
-
0018-9367
- INSPEC Accession Number:
-
3252264
- Digital Object Identifier :
-
10.1109/14.2373
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
06 August 2002
- Issue Date :
-
Jun 1988
- Sponsored by :
-
IEEE Dielectrics and Electrical Insulation Society