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Browse Journals & Magazines > Applied Superconductivity, IE ...> Volume:3 Issue:1 Help

Fabrication and characterization of HTS/semiconductor three terminal device

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3 Author(s)
Huang, Q. ; Fac. of Eng., Yokohama Nat. Univ., Japan ; Yoshikawa, N. ; Sugahara, M.

The authors present preliminary experimental results of a high-T/sub c/ superconductor/semiconductor three-terminal device with a SUBSIT (superconducting base, semiconducting isolated transistor) structure, where Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub x/ (BSCCO) and Te are used as superconducting base and semiconducting collector, respectively. The device with a Au/Te/BSCCO/BSCO/BSCCO structure is fabricated on a MgO

Published in:
Applied Superconductivity, IEEE Transactions on  (Volume:3 ,  Issue: 1 )

Date of Publication: March 1993

Page(s):
1957 - 1960
ISSN :
1051-8223
INSPEC Accession Number:
4473504
Digital Object Identifier :
10.1109/77.233576
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
March 1993
Sponsored by :
The IEEE Council on Superconductivity

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