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Application of a high-voltage pumped supply for low-power DRAM

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6 Author(s)
R. C. Foss ; MOSAID Technol. Inc., Kanata, Ont., Canada ; G. Allan ; P. Gillingham ; F. Larochelle
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A pumped, regulated V/sub pp/ supply feeding static word-line driver circuits can be exploited in other areas of a DRAM, allowing increased flexibility in architecture and improving performance. A feedback loop sets the V/sub pp/ level to exactly that required to write a full '1' level to the memory cell, independent of process or operating condition. The need for double-boosted nodes is eliminated, making the V/sub pp/ level th highest voltage on the chip and easing voltage stress problems. The V/sub pp/ supply is also employed in a modulated input-threshold world-line repeater, which regenerates the world-line signal to overcome RC delay. Significant area savings can be realized in high-density DRAMs by multiplexing sense amplifiers between adjacent arrays, using n-channel isolation devices controlled by V/sub pp/ level signals. A final use of the regulated V/sub pp/ supply is in an n-channel only output buffer achieving full rail-to-rail swing.<>

Published in:

VLSI Circuits, 1992. Digest of Technical Papers., 1992 Symposium on

Date of Conference:

4-6 June 1992