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Micromachined electron tunneling infrared sensors

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5 Author(s)
Kenny, T.W. ; Center for Space Microelectron. Technol., California Inst. of Technol., Pasadena, CA, USA ; Kaiser, W.J. ; Podosek, J.A. ; Rockstad, H.K.
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The authors describe the development of an improved Golay cell. This sensor is constructed entirely from micromachined silicon components. In this device, a silicon oxynitride (SiO/sub x/N/sub y/) membrane is deflected by the thermal expansion of a small volume of trapped gas. To detect the motion of the membrane, an electron tunneling displacement transducer is used. An improved infrared sensor in which the cantilever was dispensed with altogether, and the rebalance force from the feedback circuit applied to the membrane directly, is described.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Date of Conference:

22-25 June 1992